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MEMS Circulator
Product Model:
SiDCR8/18-12N
Product Introduction
The world’s first to introduce a new generation of MEMS circulators fabricated using high‑precision micro‑ and nano‑3D processing, photoencapsulation, and TSV (Through Silicon Via) MEMS technology, this product boasts frequency coverage up to 40 GHz, delivering exceptional microwave performance with high power handling, ultra‑low insertion loss, full shielding, and strong anti‑interference capabilities. It features 50Ω microstrip/coaxial coplanar waveguide outputs and utilizes wire bonding for interconnection.
MEMS Circulator Selection Table
Performance Metrics
Parameter Name | Symbol | Test conditions: Unless otherwise specified, -55 °C ≤ T A ≤85 °C f : 8 GHz–18 GHz, P I =-10dBm, Z 0 =50Ω | Limit value | Unit | |
|
|
| Minimum | Maximum |
|
Insertion loss | IL + | T A =25 °C ； | – | 0.7 | dB |
|
| T A =Extreme temperature (-55 °C /85 °C ) | – | 0.9 | dB |
Isolation degree | ISO – | T A =25 °C ； | 15 | – | dB |
|
| T A =Extreme temperature (-55 °C /85 °C ) | 13 | – | dB |
Voltage Standing Wave Ratio | VSWR | T A =25 °C ； | – | 1.45 | – |
|
| T A =Extreme temperature (-55 °C /85 °C ) | – | 1.55 | – |
Application Fields
- Radar
- Aerospace
- Microwave Communication
Main Dimensions and Interface Definitions
Note: P1, P2, and P3 represent the wire bonding areas; “N” indicates that the transmission direction is counterclockwise, i.e., P3 → P2 → P1.
Dimension symbol | Value (unit: mm) | ||
| Minimum | Nominal | Maximum |
A | - | - | 2.90 |
A1 | - | 0.70 | - |
B | - | 4.00 | - |
D | 7.90 | - | 8.00 |
E | 6.90 | - | 7.00 |
Z | - | 1.50 | - |
Typical Curve
Consultation
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