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MEMS Isolator
Product Model:
SiIS30/32-11S
Product Introduction
The world’s first to launch a new generation of MEMS isolators fabricated using high‑precision micro‑ and nano‑3D processing, photoencapsulation, and TSV (Through Silicon Via) MEMS technology, these products boast a frequency coverage extending up to 40 GHz, delivering exceptional microwave performance with high power handling, ultra‑low insertion loss, full shielding, and strong anti‑interference capabilities. They feature 50Ω microstrip/coaxial coplanar waveguide outputs and utilize wire bonding for interconnection.
MEMS Isolator Selection Guide
Performance Metrics
Parameter Name | Symbol | Test conditions: Unless otherwise specified, -55 °C ≤ T A ≤85 °C f : 30 GHz–32 GHz, P I =-10dBm, Z 0 =50Ω | Limit value | Unit | |
|
|
| Minimum | Maximum |
|
Insertion loss | IL + | T A =25 °C ； | – | 0.5 | dB |
|
| T A =Extreme temperature (-55 °C /85 °C ) | – | 0.6 | dB |
Isolation degree | ISO – | T A =25 °C ； | 18 | – | dB |
|
| T A =Extreme temperature (-55 °C /85 °C ) | 16 | – | dB |
Voltage Standing Wave Ratio | VSWR | T A =25 °C ； | – | 1.25 | – |
|
| T A =Extreme temperature (-55 °C /85 °C ) | – | 1.40 | – |
Application Fields
- Radar
- Aerospace
- Microwave Communication
Main Dimensions and Interface Definitions
Note: P1 and P2 are the wire bonding areas; “S” indicates that the transmission direction is clockwise, i.e., P1 → P2.
Dimension symbol | Value (Unit: mm ) | ||
| Minimum | Nominal | Maximum |
A | - | - | 2.60 |
A1 | - | 0.60 | - |
D | 4.95 | 5.00 | 5.05 |
E | 4.95 | 5.00 | 5.05 |
Z | - | 1.00 | - |
Typical Curve
Consultation
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