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MEMS Isolator
Product Model:
SiIS8/12-12N
Product Introduction
The world’s first to launch a new generation of MEMS isolators fabricated using high‑precision micro‑ and nano‑3D processing, image encapsulation, and TSV (Through Silicon Via) MEMS technology, these products boast a frequency coverage extending up to 40 GHz, delivering exceptional microwave performance with high power handling, ultra‑low insertion loss, full shielding, and superior anti‑interference capabilities. They feature 50Ω microstrip/coaxial coplanar waveguide outputs and utilize wire bonding for interconnection.
MEMS Isolator Selection Guide
Performance Metrics
Parameter Name | Symbol | Test conditions: Unless otherwise specified, -55 °C ≤ T A ≤85 °C f : 8 GHz–12 GHz, P I =-10dBm, Z 0 =50Ω | Limit value | Unit | |
|
|
| Minimum | Maximum |
|
Insertion loss | IL + | T A =25 °C ； | – | 0.55 | dB |
|
| T A =Extreme temperature (-55 °C /85 °C ) | – | 0.65 | dB |
Isolation degree | ISO – | T A =25 °C ； | 16 | – | dB |
|
| T A =Extreme temperature (-55 °C /85 °C ) | 15 | – | dB |
Voltage Standing Wave Ratio | VSWR | T A =25 °C ； | – | 1.35 | – |
|
| T A =Extreme temperature (-55 °C /85 °C ) | – | 1.40 | – |
Application Fields
- Radar
- Aerospace
- Microwave Communication
Main Dimensions and Interface Definitions
Note: P1 and P2 are the wire bonding areas, with the default transmission direction being counterclockwise, from P2 to P1.
Dimension symbol | Value (unit: mm) | ||
| Minimum | Nominal | Maximum |
A | - | - | 2.50 |
A1 | - | 0.60 | - |
B | - | 4.50 | - |
D | 5.95 | 6.00 | 6.05 |
E | 5.95 | 6.00 | 6.05 |
Typical Curve
Consultation
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