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MEMS Isolator
Product Model:
SiIS8/12-11N
Product Introduction
The world’s first to launch a new generation of MEMS isolators fabricated using high‑precision micro‑ and nano‑3D processing, image encapsulation, and TSV (Through Silicon Via) MEMS technology, these products boast a frequency coverage extending up to 40 GHz, delivering exceptional microwave performance with high power handling, ultra‑low insertion loss, full shielding, and superior anti‑interference capabilities. They feature 50 Ω microstrip/coaxial line outputs and utilize wire bonding for interconnection.
MEMS Isolator Selection Guide
Performance Metrics
Parameter Name | Symbol | Test conditions: Unless otherwise specified, -55 °C ≤ T A ≤85 °C f : 8 GHz–12 GHz, P I =-10dBm, Z 0 =50Ω | Limit value | Unit | |
|
|
| Minimum | Maximum |
|
Insertion loss | IL + | T A =25 °C ； | – | 0.55 | dB |
|
| T A =Extreme temperature (-55 °C /85 °C ) | – | 0.65 | dB |
Isolation degree | ISO – | T A =25 °C ； | 17 | – | dB |
|
| T A =Extreme temperature (-55 °C /85 °C ) | 16 | – | dB |
Voltage Standing Wave Ratio | VSWR | T A =25 °C ； | – | 1.3 | – |
|
| T A =Extreme temperature (-55 °C /85 °C ) | – | 1.4 | – |
Application Fields
- Radar
- Aerospace
- Microwave Communication
Main Dimensions and Interface Definitions
Note: P1 and P2 denote the wire bonding areas, and “N” indicates that the transmission direction is counterclockwise, i.e., P2 → P1.
Dimension symbol | Value (unit: mm) | ||
| Minimum | Nominal | Maximum |
A | - | - | 2.70 |
A1 | - | 0.70 | - |
D | 6.95 | 7.00 | 7.05 |
E | 6.95 | 7.00 | 7.05 |
Z | - | 1.30 | - |
Typical Curve
Consultation
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