MEMS isolator
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  • MEMS isolator

MEMS isolator

Product Features ● Frequency: 8–12 GHz ● Ultra-small volume ● MEMS process ● High power capacity ● Custom processing available upon request ● High precision and good consistency



Product Introduction

The world’s first to launch a new-generation MEMS isolator fabricated using high-precision micro- and nano-scale 3D processing, image encapsulation, and TSV (Through-Silicon Via) MEMS technology, this product boasts an exceptional microwave performance with frequency coverage up to 40 GHz, featuring high power handling capability, ultra-low insertion loss, full shielding, and superior anti-interference characteristics. It offers a 50Ω microstrip/co-planar waveguide output and utilizes wire bonding for interconnection.

MEMS Isolator Selection Table

Performance metrics

Parameter Name

Symbol

Test conditions:

Unless otherwise specified, -55 Celsius T A ≤85 Celsius

f 8 GHz to 12 GHz, P I =-10 dBm, Z 0 =50Ω

Limit value

Unit

 

 

 

Minimum

Maximum

 

Insertion loss

IL +

T A   =25 Celsius

0.55

dB

 

 

T A   = Extreme temperature (-55) Celsius /85 Celsius )

0.65

dB

Isolation degree

ISO

T A   =25 Celsius

17

dB

 

 

T A   = Extreme temperature (-55) Celsius /85 Celsius )

16

dB

Voltage Standing Wave Ratio

VSWR

T A   =25 Celsius

1.3

 

 

T A   = Extreme temperature (-55) Celsius /85 Celsius )

1.4

Application fields

  • Radar
  • Aerospace
  • Microwave communication

Main dimensions and interface definitions

Note: P1 and P2 are the wire-bonding areas; “N” indicates that the transmission direction is counterclockwise, i.e., from P2 to P1.

 

Dimension symbol

Numerical value (unit: mm)

 

Minimum

Nominal

Maximum

A

-

-

2.70

A1

-

0.70

-

D

6.95

7.00

7.05

And E

6.95

7.00

7.05

Z

-

1.30

-

Typical curve


Key words:

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