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E-mail:jl.dong@mtmems.com
Address:No.1, Meitai Road, Luquan District, Shijiazhuang City
MEMS isolator
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Product Classification:
Product Introduction
The world’s first to launch a new-generation MEMS isolator fabricated using high-precision micro- and nano-scale 3D processing, image encapsulation, and TSV (Through-Silicon Via) MEMS technology, this product boasts an exceptional microwave performance with frequency coverage up to 40 GHz, featuring high power handling capability, ultra-low insertion loss, full shielding, and superior anti-interference characteristics. It offers a 50Ω microstrip/co-planar waveguide output and utilizes wire bonding for interconnection.
MEMS Isolator Selection Table
Performance metrics
Parameter Name |
Symbol |
Test conditions: Unless otherwise specified, -55 Celsius ≤ T A ≤85 Celsius
f 10.5 GHz to 14 GHz, P I =-10 dBm, Z 0 =50Ω |
Limit value |
Unit |
|
|
|
|
Minimum |
Maximum |
|
Insertion loss |
IL +
|
T A =25 Celsius ;
|
– |
0.6
|
dB |
|
|
T A = Extreme temperature (-55) Celsius /85 Celsius ) |
– |
0.7
|
dB |
Isolation degree |
ISO –
|
T A =25 Celsius ;
|
15
|
– |
dB |
|
|
T A = Extreme temperature (-55) Celsius /85 Celsius ) |
14
|
– |
dB |
Voltage Standing Wave Ratio |
VSWR |
T A =25 Celsius ;
|
– |
1.25
|
– |
|
|
T A = Extreme temperature (-55) Celsius /85 Celsius ) |
– |
1.40
|
– |
Application areas

- Radar
- Aerospace
- Microwave communication
Main dimensions and interface definitions
Note: P1 and P2 are the wire-bonding areas. By default, the transmission direction is clockwise, from P1 to P2.
Dimension symbol |
Numerical value (unit: mm) |
||
|
Minimum |
Nominal |
Maximum |
A |
-
|
-
|
2.70
|
A1 |
-
|
0.60
|
-
|
B |
-
|
2.50
|
-
|
D |
6.40
|
-
|
6.50
|
And E |
4.90
|
-
|
5.00
|
Typical curve
Key words:
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