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MEMS Isolator
Product Model:
SiIS27/31-12
Product Introduction
The world’s first to launch a new generation of MEMS isolators fabricated using high‑precision micro‑ and nano‑3D processing, image encapsulation, and TSV (Through Silicon Via) MEMS technology, these products boast an impressive frequency coverage extending up to 40 GHz. They deliver exceptional microwave performance with high power handling, ultra‑low insertion loss, full shielding, and superior anti‑interference capabilities, featuring 50Ω microstrip/coaxial coplanar waveguide outputs and wire bonding interconnects.
MEMS Isolator Selection Guide
Performance Metrics
Parameter Name | Symbol | Test conditions: Unless otherwise specified, -55 °C ≤ T A ≤85 °C f : 27 GHz–31 GHz, P I =-10dBm, Z 0 =50Ω | Limit value | Unit | |
|
|
| Minimum | Maximum |
|
Insertion loss | IL + | T A =25 °C ； | – | 0.7 | dB |
|
| T A =Extreme temperature (-55 °C /85 °C ) | – | 0.8 | dB |
Isolation degree | ISO – | T A =25 °C ； | 16 | – | dB |
|
| T A =Extreme temperature (-55 °C /85 °C ) | 15 | – | dB |
Voltage Standing Wave Ratio | VSWR | T A =25 °C ； | – | 1.3 | – |
|
| T A =Extreme temperature (-55 °C /85 °C ) | – | 1.4 | – |
Application Fields
- Radar
- Aerospace
- Microwave Communication
Main Dimensions and Interface Definitions
Note 1: P1 and P2 are the wire bonding areas, with the default transmission direction being clockwise, from P1 to P2; shaded area: resistive film.
Dimension symbol | Number Value (unit: mm) | ||
| Minimum | Nominal | Most Big |
A | - | - | 2.60 |
A1 | 0.50 | 0.60 | 0.70 |
B | 2.40 | 2.50 | 2.60 |
D | 6.45 | 6.50 | 6.55 |
E | 4.95 | 5.00 | 5.05 |
Typical Curve
Consultation
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