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MEMS Isolator
Product Model:
SiIS32/38-11N
Product Introduction
The world’s first to launch a new generation of MEMS isolators fabricated using high‑precision micro‑ and nano‑3D processing, photoencapsulation, and TSV (Through Silicon Via) MEMS technology, these products boast an impressive frequency coverage extending up to 40 GHz. They deliver exceptional microwave performance with high power handling, ultra‑low insertion loss, full shielding, and superior anti‑interference capabilities, featuring 50Ω microstrip/coaxial line outputs and wire bonding for interconnection.
MEMS Isolator Selection Guide
Performance Metrics
Parameter Name | Symbol | Test conditions: Unless otherwise specified, -55 °C ≤ T A ≤85 °C f : 32 GHz–38 GHz, P I =-10dBm, Z 0 =50Ω | Limit value | Unit | |
|
|
| Minimum | Maximum |
|
Insertion loss | IL + | T A =25 °C ； | – | 0.7 | dB |
|
| T A =Extreme temperature (-55 °C /85 °C ) | – | 0.9 | dB |
Isolation degree | ISO – | T A =25 °C ； | 16 | – | dB |
|
| T A =Extreme temperature (-55 °C /85 °C ) | 14 | – | dB |
Voltage Standing Wave Ratio | VSWR | T A =25 °C ； | – | 1.35 | – |
|
| T A =Extreme temperature (-55 °C /85 °C ) | – | 1.45 | – |
Application Fields
- Radar
- Aerospace
- Microwave Communication
Main Dimensions and Interface Definitions
Note: P1 and P2 denote the wire bonding areas; “N” indicates that the transmission direction is counterclockwise, i.e., from P2 to P1.
Dimension symbol | Value (Unit: mm ) | ||
| Minimum | Nominal | Maximum |
A | - | - | 2.60 |
A1 | - | 0.60 | - |
D | 4.90 | - | 5.00 |
E | 4.40 | - | 4.50 |
Z | - | 1.35 | - |
Typical Curve
Consultation
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