MEMS isolator
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  • MEMS isolator

MEMS isolator

Product Features ● Frequency: 32–38 GHz ● Ultra-small volume ● MEMS process ● High power capacity ● Custom processing available upon request ● High precision and good consistency



Product Introduction

The world’s first to launch a new-generation MEMS isolator fabricated using high-precision micro- and nano-scale 3D processing, image encapsulation, and TSV (Through-Silicon Via) MEMS technology, this product boasts an exceptional microwave performance with frequency coverage up to 40 GHz, featuring high power handling capability, ultra-low insertion loss, full shielding, and superior anti-interference characteristics. It offers a 50Ω microstrip/co-planar waveguide output and utilizes wire bonding for interconnection.

MEMS Isolator Selection Table

Performance metrics

Parameter Name

Symbol

Test conditions:

Unless otherwise specified, -55 Celsius T A ≤85 Celsius

f 32 GHz to 38 GHz, P I =-10 dBm, Z 0 =50Ω

Limit value

Unit

 

 

 

Minimum

Maximum

 

Insertion loss

IL +

T A   =25 Celsius

0.7

dB

 

 

T A   = Extreme temperature (-55) Celsius /85 Celsius )

0.9

dB

Isolation degree

ISO

T A   =25 Celsius

16

dB

 

 

T A   = Extreme temperature (-55) Celsius /85 Celsius )

14

dB

Voltage Standing Wave Ratio

VSWR

T A   =25 Celsius

1.35

 

 

T A   = Extreme temperature (-55) Celsius /85 Celsius )

1.45

Application areas

  • Radar
  • Aerospace
  • Microwave communication

Main dimensions and interface definitions

Note: P1 and P2 are the wire-bonding areas; “N” indicates that the transmission direction is counterclockwise, i.e., from P2 to P1.

 

Dimension symbol

Value (unit: mm )

 

Minimum

Nominal

Maximum

A

-

-

2.60

A1

-

0.60

-

D

4.90

-

5.00

And E

4.40

-

4.50

Z

-

1.35

-

Typical curve


Key words:

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